InGaAs pin photodiode fabricated on semi-insulating InP substrate for monolithic integration

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InGaAs pin photodiode fabricated on semi-insulating InP substrate for monolithic integration

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© The Institution of Electrical Engineers
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A low-dark-current high-speed InGaAs PIN photodiode suitable for optoelectronic monolithic integration has been fabricated by LPE method on semi-insulating InP substrate. The photodiode has the lowest reported dark-current density of 2.5 × 10−6 A/cm2 at −10 V in this material system. At the operating voltage of −5 V, an external quantum efficiency of >90% at 1.3 μm and >83% at 1.55 μm, a rise time of <35 ps and an FWHM of <45 ps have been measured.

Inspec keywords: indium compounds; gallium arsenide; photodiodes; liquid phase epitaxial growth; III-V semiconductors

Other keywords: InGaAs PIN photodiode; semiconductors; low-dark-current; operating voltage; external quantum efficiency; InP semiinsulating substrate; dark-current density; FWHM; fabrication; rise time; integrated optics; LPE; optoelectronic monolithic integration

Subjects: Epitaxial growth; II-VI and III-V semiconductors; Photoelectric devices; Integrated optics; Integrated optoelectronics

References

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