Halogen lamp annealing of GaAs for MESFET fabrication

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Halogen lamp annealing of GaAs for MESFET fabrication

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Published

Incoherent light from high-intensity halogen lamps was used for capless annealing of 2-inch GaAs wafers following silicon ion implantation. Fabrication of depletion mode MESFETs on the annealed wafers was used to study the DC characteristics and uniformity achieved with this annealing method. An average mutual transconductance of 110 mS/mm was obtained with MESFET fabricated wafers which were uniformly implanted at 5 × 1012 cm−2 with Si+ at 80 keV and subsequently annealed at 900°C for 2 s. The carrier concentration profiles obtained with this method are shown to be sharper than those obtained with furnace annealed wafers, which in turn results in a sharper device pinch-off voltage.

Inspec keywords: ion implantation; gallium arsenide; silicon; annealing; semiconductor doping; Schottky gate field effect transistors; III-V semiconductors

Other keywords: device pinch-off voltage; ion implantation; capless annealing; MESFET fabrication; Si+ dopant; DC characteristics; depletion mode; semiconductor doping; halogen lamps; uniformity; III-V semiconductors; mutual transconductance; 900°C; GaAs:Si; carrier concentration profiles; GaAs wafers

Subjects: Semiconductor doping; Other field effect devices

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