High-transconductance self aligned GaAs MESFET using implantation through an AlN layer

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High-transconductance self aligned GaAs MESFET using implantation through an AlN layer

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© The Institution of Electrical Engineers
Published

Tungsten-silicide-gate self aligned GaAs MESFETs were fabricated on a very thin channel layer formed by implantation through an AlN layer on a semi-insulating GaAs substrate. Transconductance of the through-implanted MESFETs showed a 30 to 50% increase as compared with that of conventional self aligned MESFETs, and reached its maximum value at 300 mS/mm for 1μm-gate-length FETs.

Inspec keywords: ion implantation; III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor doping

Other keywords: self aligned structure; semiconductor doping; channel layer; WSi2 gate; AlN layer; transconductance; GaAs MESFET; III-V semiconductors

Subjects: Semiconductor doping; Other field effect devices

References

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