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Linewidth enhancement factor for quantum-well lasers

Linewidth enhancement factor for quantum-well lasers

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© The Institution of Electrical Engineers
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The linewidth enhancement factor α is calculated for an idealised GaInAs quantum-well laser. Values between 1 and 2 are found for a range of possible lasing energies. Somewhat larger values are expected for GaInAs quantum wells with InP barriers. It is concluded that dramatic reductions in α are not to be expected for quantum wells.

Inspec keywords: indium compounds; III-V semiconductors; semiconductor junction lasers; gallium arsenide

Other keywords: GaInAs quantum-well laser; linewidth enhancement factor; lasing energies; InP barriers; III-V semiconductors

Subjects: Lasing action in semiconductors; Semiconductor lasers

References

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      • Razeghi, M., Duchemin, J.P.: `MOCVD Ga', IOOC Conference, 1983, Tokyo.
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      • M. Razeghi , J.P. Hirtz , U.O. Ziemelis , C. Delalande , B. Etienne , M. Voos . Growth of Ga0.47In0.53As-InP quantum wells by low pressure metalorganic chemical vapour deposition. Appl. Phys. Lett. , 585 - 587
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