Assessment of millimetre-wave Si IMPATT material

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Assessment of millimetre-wave Si IMPATT material

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Millimetre-wave Si double-drift IMPATTs require high doping levels. Under these circumstances it will be shown that the determination of the doping profile from C/V or VB measurements leads to erroneous results and that SRP profiling is the preferred method.

Inspec keywords: doping profiles; silicon; elemental semiconductors; IMPATT diodes

Other keywords: doping profile; SRP profiling; MM wave IMPATT; Si double drift IMPATT

Subjects: Elemental semiconductors; Solid-state microwave circuits and devices; Junction and barrier diodes

References

    1. 1)
      • C.A. Lee . Ionisation rates of holes and electrons in silicon. Phys. Rev.
    2. 2)
      • A.F. Ioffe . (1960) , Physics of semiconductors.
    3. 3)
      • W.N. Grant . Electron and hole ionisation rates in epitaxial silicon at high electric fields. Solid-State Electron. , 1189 - 1203
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