Low threshold current GaAs/GaAlAs GRIN-SCH stripe lasers grown by OMVPE

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Low threshold current GaAs/GaAlAs GRIN-SCH stripe lasers grown by OMVPE

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© The Institution of Electrical Engineers
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The letter describes the characteristics of stripe lasers formed in GaAs/GaAlAs single-quantum-well graded-composition separate-confinement heterostructures (GRIN-SCH) grown by low-pressure organometallic vapour phase epitaxy (LP-OMVPE). We show that the low threshold current density that has been achieved with the GRIN-SCH structure allows low threshold currents (38 mA) to be achieved in a simple gain-guided stripe-geometry laser. These low thresholds have been obtained without resorting to a complex nonplanar (lower yield) technology, and it is shown that the good uniformity offered by OMVPE is maintained through to the mounted device stage.

Inspec keywords: aluminium compounds; semiconductor junction lasers; gallium arsenide; III-V semiconductors; semiconductor growth; semiconductor epitaxial layers; vapour phase epitaxial growth

Other keywords: single-quantum-well graded-composition separate-confinement heterostructures; low-pressure organometallic vapour phase epitaxy; low threshold current density; gain-guided stripe-geometry laser; GaAs/GaAlAs; stripe lasers; semiconductor laser; OMVPE; GRIN-SCH

Subjects: Epitaxial growth; Lasing action in semiconductors; Design of specific laser systems; Semiconductor lasers; II-VI and III-V semiconductors; Chemical vapour deposition

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