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Hydrogenation of electron traps in bulk GaAs and GaP

Hydrogenation of electron traps in bulk GaAs and GaP

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The effect of hydrogenation on a variety of electrically active defects in bulk single-crystal GaAs and GaP has been observed using transient capacitance spectroscopy. Approximately half the different defect states in these materials were neutralised by hydrogen incorporation. The efficiency of neutralisation was slightly more pronounced for defects in GaAs compared to those in GaP.

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