AlGaAs/GaAs multiquantum-well (MQW) laser applied to monolithic integration with FET driver

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AlGaAs/GaAs multiquantum-well (MQW) laser applied to monolithic integration with FET driver

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© The Institution of Electrical Engineers
Published

A ridge-waveguide AlGaAs/GaAs multiquantum-well (MQW) laser has been monolithically integrated with two MESFETs on a semi-insulating GaAs substrate. The laser was grown in an etched groove to realise a nearly planar horizontal arrangement with FETs. This MQW laser was found to successfully achieve a CW operation with a lowthreshold current of 20 mA at room temperature.

Inspec keywords: field effect integrated circuits; Schottky gate field effect transistors; III-V semiconductors; semiconductor junction lasers; aluminium compounds; gallium arsenide

Other keywords: monolithic integration; AlGaAs/GaAs multiquantum-well laser; planar horizontal arrangement; semiconductor laser; CW operation; optoelectronic integrated circuit; MESFETs; ridge-waveguide; MQW laser; FET driver; semiinsulating GaAs substrate; threshold current

Subjects: Design of specific laser systems; Lasing action in semiconductors; Other field effect integrated circuits; Semiconductor lasers

References

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      • Matsueda, H., Sasaki, S., Kohashi, T., Tanaka, T., Maeda, M., Nakamura, M.: `Monolithic integration of a terraced laser diode, photomonitor, and electric circuits on semi-insulating GaAs', Tech. Dig. CLEO, 1983, , p. 120.
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      • W.T. Tsang . Extremely low threshold (AlGa)As modified multiquantum well heterostructure lasers grown by molecular-beam epitaxy. Appl. Phys. Lett.
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