Behaviour of device structures based on IDT-launched bulk acoustic waves in a parallel-sided plate of lithium niobate

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Behaviour of device structures based on IDT-launched bulk acoustic waves in a parallel-sided plate of lithium niobate

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© The Institution of Electrical Engineers
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We present device responses due to fast shear and longitudinal waves, which propagate between a pair of IDTs on an upper surface via a reflection from the lower surface of a parallel-sided plate of 41°-rotated Y-cut lithium niobate. Single-mode response can be obtained by removing unwanted modes using saw cuts in the crystal substrate. Centre-frequency and bandwidth enhancement of a factor of two or more are achievable compared with the SAW response of the same IDTs.

Inspec keywords: ultrasonic transducers; ultrasonic devices; lithium compounds

Other keywords: bulk acoustic waves; interdigital transducers; centre-frequency enhancement; LiNbO3 plate; parallel-sided plate; longitudinal waves; IDT; IDTs; single-mode response; bandwidth enhancement; Y-cut; shear waves

Subjects: Acoustic wave devices; Sonic and ultrasonic equipment

References

    1. 1)
      • Helmick, C.N., White, D.L., Lakin, K.M.: `Deep bulk acoustic wave devices utilizing interdigital transducers', Proc. 1981 IEEE Ultrasonics Symposium, p. 280–285.
    2. 2)
      • M.F. Lewis . High frequency acoustic plate mode devices employing interdigital transducers. Electron. Lett. , 819 - 821
    3. 3)
      • Lewis, M.F.: `Surface skimming bulk waves, SSBW', Proc. 1977 IEEE Ultrasonics Symposium, p. 744–752.
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