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Electric-field-shielding layers formed by oxygen implantation into silicon

Electric-field-shielding layers formed by oxygen implantation into silicon

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© The Institution of Electrical Engineers
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The electric-field-shielding effect was found in a layer consisting of a mixture of polycrystalline silicon and silicon oxide formed by oxygen ion implanatation. The layer was formed between the buried SiO2 and the upper Si layer, which improved characteristics for MOSFETs fabricated using SIMOX (separation by implanted oxygen) technology. By forming this layer, the threshold voltages for the MOSFETs were almost independent of substrate bias. Drain-to-source breakdown voltages for the p-MOSFETs and n-MOSFETs were raised to 250 V and 180 V, respectively.

Inspec keywords: silicon; semiconductor technology; insulated gate field effect transistors; ion implantation; elemental semiconductors

Other keywords: O ion implantation; SiO; SIMOX; polycrystalline Si; buried SiO2; substrate bias; electric-field-shielding effect; drain-to-source breakdown voltages; MOSFETs

Subjects: Elemental semiconductors; Insulated gate field effect transistors; Semiconductor doping

References

    1. 1)
      • M. Akiya , K. Ohwada , S. Nakashima . High-voltage buried-channel MOS fabricated by oxygen implantation into silicon. Electron. Lett. , 640 - 641
    2. 2)
      • Hayashi, T., Okamoto, H., Homma, Y.: `Defects in Si on buried SiO', Institute of Physics Conference Series, 1981, 59, p. 533–538.
    3. 3)
      • K. Izumi , M. Doken , H. Ariyoshi . CMOS devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon. Electron. Lett. , 593 - 594
    4. 4)
      • Mochizuki, H., Aoki, T., Yamoto, H., Okayama, M., Abe, M., Ando, T.: `Semi-insulating polycrystalline-silicon (SIPOS) films applied to MOS integrated circuits', Proceedings of the 7th International Conference on solid state devices, 1975, Tokyo, 15, p. 41–48, Jpn. J. Appl. Phys., 1976, Suppl. 15-1.
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