© The Institution of Electrical Engineers
The electric-field-shielding effect was found in a layer consisting of a mixture of polycrystalline silicon and silicon oxide formed by oxygen ion implanatation. The layer was formed between the buried SiO2 and the upper Si layer, which improved characteristics for MOSFETs fabricated using SIMOX (separation by implanted oxygen) technology. By forming this layer, the threshold voltages for the MOSFETs were almost independent of substrate bias. Drain-to-source breakdown voltages for the p-MOSFETs and n-MOSFETs were raised to 250 V and 180 V, respectively.
References
-
-
1)
-
M. Akiya ,
K. Ohwada ,
S. Nakashima
.
High-voltage buried-channel MOS fabricated by oxygen implantation into silicon.
Electron. Lett.
,
640 -
641
-
2)
-
Hayashi, T., Okamoto, H., Homma, Y.: `Defects in Si on buried SiO', Institute of Physics Conference Series, 1981, 59, p. 533–538.
-
3)
-
K. Izumi ,
M. Doken ,
H. Ariyoshi
.
CMOS devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon.
Electron. Lett.
,
593 -
594
-
4)
-
Mochizuki, H., Aoki, T., Yamoto, H., Okayama, M., Abe, M., Ando, T.: `Semi-insulating polycrystalline-silicon (SIPOS) films applied to MOS integrated circuits', Proceedings of the 7th International Conference on solid state devices, 1975, Tokyo, 15, p. 41–48, Jpn. J. Appl. Phys., 1976, Suppl. 15-1.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19830387
Related content
content/journals/10.1049/el_19830387
pub_keyword,iet_inspecKeyword,pub_concept
6
6