Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

High-speed planar InP/InGaAs avalanche photodiode fabricated by vapour phase epitaxy

High-speed planar InP/InGaAs avalanche photodiode fabricated by vapour phase epitaxy

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Electrical Engineers
Published

A high-speed planar InP/InGaAs avalanche photodiode (APD) with p--n−-n reach-through structure was realised by vapour phase epitaxy and Zn double diffusion. The criterion for achieving a high-speed response has been revealed. Performance of the InGaAs/InP-APD was confirmed to exceed that for Ge-APD in a 2 Gbit s transmission experiment.

Inspec keywords: avalanche photodiodes; gallium arsenide; III-V semiconductors; vapour phase epitaxial growth; indium compounds; semiconductor growth

Other keywords: 2 Gbit/s transmission experiment; p+ -n-n reach-through structure; Zn double diffusion; vapour phase epitaxy; high-speed response; APD; planar InP/InGaAs avalanche photodiode

Subjects: Photoelectric devices; Epitaxial growth

References

    1. 1)
      • N. Susa , H. Nakagome , O. Mikami , H. Ando , H. Kanbe . New InGaAs/InP avalanche photodiode structure in the 1–1.6μm wavelength region. IEEE J. Quantum Electron. , 864 - 870
    2. 2)
      • N. Susa , Y. Yamauchi , H. Kanbe . Continuous growth of high purity InP/InGaAs on InP substrate by vapor phase epitaxy. Jpn. J. Appl. Phys. , L253 - L256
    3. 3)
      • N. Susa , H. Kanbe , H. Ando , Y. Ohmachi . Plasma enhanced CVD Si3N4 film applied to InP avalanche photodiodes. Jpn. J. Appl. Phys. , L675 - L678
    4. 4)
      • Kanbe, H., Susa, N., Nakagome, H., Ando, H.: `Structures of InGaAs avalanche photodiodes', Meet. Integrated and Guided-wave Optics, 1980, 1980, WDI, Nevada, Presented at Top..
    5. 5)
      • S.R. Forrest , R.G. Smith , O.K. Kim . Performance of In0.53Ga0.47As/InP avalanche photodiodes. IEEE J. Quantum Electron. , 2040 - 2048
    6. 6)
      • H. Ando , H. Kanbe . Ionization coefficient measurement in GaAs by using multiplication noise characteristics. Solid-State Electron. , 629 - 634
    7. 7)
      • H. Ando , N. Susa , H. Kanbe . Low-temperature Zn-and Cd-diffusion profiles in InP and formation of guard ring in InP avalanche photodiode. IEEE Trans. , 1408 - 1413
    8. 8)
      • T. Kimura . Single-mode system and components for longer wavelengths. IEEE Trans. , 987 - 1010
    9. 9)
      • O. Mikami , H. Ando , H. Kanbe , T. Mikawa , T. Kaneda , Y. Toyama . Improved germanium avalanche photodiodes in the wavelength region of 1–1.6 μm. IEEE J. Quantum Electron. , 1002 - 1007
    10. 10)
      • S.R. Forrest , O.K. Kim , R.G. Smith . Optical response time in In0.53Ga0.47As/InP avalanche photodiodes. Appl. Phys. Lett. , 95 - 98
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19830368
Loading

Related content

content/journals/10.1049/el_19830368
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Print this page
This is a required field
Please enter a valid email address