Regrowth of amorphous layers in silicon-on-insulator structures formed by the implantation of oxygen

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Regrowth of amorphous layers in silicon-on-insulator structures formed by the implantation of oxygen

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© The Institution of Electrical Engineers
Published

Synthesised silicon-on-insulator structures have been formed and implanted with 1×1016 As+ cm−2 at 40 keV. The regrowth kinetics of the amorphised layer, which also contains lattice defects and excess oxygen, has been studied by Rutherford backscattering. The regrowth of the layer occurs at a mean rate of 13 Å min−1 at 500°C with an activation energy of 2.7±0.2 eV. This experiment further demonstrates the suitability of these synthesised structures as a direct replacement for bulk silicon in VLSI technology.

Inspec keywords: ion implantation; elemental semiconductors; particle backscattering; silicon; semiconductor growth; amorphous semiconductors; silicon compounds; arsenic; semiconductor doping; semiconductor-insulator boundaries

Other keywords: lattice defects; As+ implantation; amorphous layers; SiO2; regrowth; Si:As; O implanted layer; Si-on-insulator structure; Rutherford backscattering; VLSI technology

Subjects: Doping and implantation of impurities; Methods of thin film deposition; Thin film growth and epitaxy; Thin film growth, structure, and epitaxy; Semiconductor doping; Structure of amorphous, disordered and polymeric materials; Metal-insulator-semiconductor structures

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