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Long delay time for lasing in very narrow graded barrier single-quantum-well lasers

Long delay time for lasing in very narrow graded barrier single-quantum-well lasers

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Published

We have observed the presence of very long delay times (∼ 1 μs) for lasing in graded barrier single-quantum-well (GB-SQW) lasers for active layers thinner than 150 Ȧ and stripe widths below approximately 10 μm. It is shown that an explanation of this phenomenon based on the dynamic evolution of the waveguide properties of these lasers gives good agreement with experimental results.

Inspec keywords: semiconductor junction lasers; laser theory

Other keywords: stripe widths; laser theory; waveguide properties; semiconductor lasers; delay time; active layers; graded barrier single quantum well lasers

Subjects: Lasing action in semiconductors; Semiconductor lasers

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