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MIM gate FET: new GaAs enhancement-mode transistor

MIM gate FET: new GaAs enhancement-mode transistor

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A new type of GaAs FET, the metal-insulator-metal gate FET, is proposed, which combines the advantages of both the GaAs MESFET and the GaAs MISFET. The device is especially suitable for the enhancement mode of operation.

References

    1. 1)
      • Andrade, T.L., Braslan, N.: `GaAs lossy gate dielectric FET', paper VA-5, 39th Device Research Conference, June 1981, CA, USA, University Santa Barbara.
    2. 2)
      • E. Kohn , J.M. Dortu . A novel GaAs insulator gate FET structure.
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