High-power InP MISFETs

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High-power InP MISFETs

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Published

InP MISFETs with SiO2 as the gate insulator and a deep channel recess have been fabricated. At 9 GHz the highest power output with 4 dB gain was 3.5 W/mm gate width with 33% power added efficiency. This power is more than twice that of the best GaAs MESFET.

Inspec keywords: insulated gate field effect transistors; power transistors; III-V semiconductors; solid-state microwave devices; indium compounds

Other keywords: III-V semiconductors; gate insulator; 9 GHz; InP MISFETs; deep channel recess; power transistors; microwave devices; SiO2

Subjects: Solid-state microwave circuits and devices; Insulated gate field effect transistors

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