Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

High-power InP MISFETs

High-power InP MISFETs

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Published

InP MISFETs with SiO2 as the gate insulator and a deep channel recess have been fabricated. At 9 GHz the highest power output with 4 dB gain was 3.5 W/mm gate width with 33% power added efficiency. This power is more than twice that of the best GaAs MESFET.

Inspec keywords: insulated gate field effect transistors; power transistors; III-V semiconductors; solid-state microwave devices; indium compounds

Other keywords: III-V semiconductors; gate insulator; 9 GHz; InP MISFETs; deep channel recess; power transistors; microwave devices; SiO2

Subjects: Solid-state microwave circuits and devices; Insulated gate field effect transistors

References

    1. 1)
      • C.N. Berglund . Surface states at steam grown Si-SiO2 interfaces. IEEE Trans. , 701 - 705
    2. 2)
      • M. Ito , S. Kagawa , T. Kaneda , T. Yamaoka . Ionization rates for electron and holes in GaAs. J. Appl. Phys. , 4607 - 4608
    3. 3)
      • M. Armand , J. Chevrier , N.T. Linh . Microwave power amplification with InP FETs. Electron. Lett. , 906 - 907
    4. 4)
      • I. Umebu , A.N.M.M. Choudhury , P.N. Robson . Ionization coefficients measured in abrupt InP junctions. Appl. Phys. Lett. , 302 - 303
    5. 5)
      • H.M. Macksey , F.H. Doerbeck . GaAs FETs having high output power per unit gate width. IEEE Electron Device Lett. , 147 - 148
    6. 6)
      • J. Chevrier , M. Armand , A.M. Huber , N.T. Linh . Vapor growth of InP for MESFETs. J. Electron. Mater. , 745 - 761
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19830296
Loading

Related content

content/journals/10.1049/el_19830296
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Print this page
This is a required field
Please enter a valid email address