1.5 μm wavelength GaInAsP C3 lasers: single-frequency operation and wideband frequency tuning

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1.5 μm wavelength GaInAsP C3 lasers: single-frequency operation and wideband frequency tuning

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We have characterised the temporal-spectral behavior of 1.5 μm wavelength cleaved-coupled-cavity (C3) lasers. Single longitudinal mode discrimination ratios in excess of 500:1 have been obtained under high bit rate modulation. Bit error rate of less than ≲ 10−9 were obtained under single-frequency operation with direct modulation up to 1 Gbit/s. Averaged frequency tuning rates as large as 26 Å/mA and frequency tuning excursion of 300 Å were achieved when the C3 laser was operated in a frequency modulation mode.

Inspec keywords: indium compounds; gallium arsenide; semiconductor junction lasers; laser tuning; III-V semiconductors

Other keywords: C3 laser; single frequency operation; longitudinal mode discrimination ratios; cleaved coupled cavity lasers; high bit rate modulation; III-V semiconductors; temporal-spectral behaviour; semiconductor lasers; GaInAsP; 1.5 micron wavelength; FM mode; wideband frequency tuning; bit error rate

Subjects: Semiconductor lasers; Lasing action in semiconductors

References

    1. 1)
      • W.T. Tsang , N.A. Olsson , R.A. Logan . High speed direct single-frequency modulation with large tuning rate and frequency excursion in cleaved-coupled-cavity semiconductor laser. Appl. Phys. Lett.
    2. 2)
      • L.A. Coldren , K. Furuya , B.I. Miller , Rentschler . Etched mirror and groove-coupled GaInAsP InP laser devices for integrated optics. IEEE J. Quantum Electron. , 1679 - 1688
    3. 3)
      • TSANG, W. T., OLSSON, N. A.: ‘A technique for fabricating cleaved coupled-cavity semiconductors in batch form’ (unpublished).
    4. 4)
      • J.P. van der Ziel , H. Temkin , R.A. Logan . Quaternary 1.5 μm (InGaAsP/InP) buried crescent lasers with separate optical confinement. Electron. Lett. , 113 - 115
    5. 5)
      • W.T. Tsang , N.A. Olsson , R.A. Logan . Stable single-longitudinal mode operation under high speed direct modulation in cleaved-coupled-cavity GaInAsP semiconductor lasers. Electron. Lett.
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