Monolithic integration of InGaAsP/InP LED and transistor—a light-coupled bistable electro-optical device

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Monolithic integration of InGaAsP/InP LED and transistor—a light-coupled bistable electro-optical device

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A new bistable electro-optical integrated three-terminal InGaAsP/InP LED-transistor device is presented. Bistability is obtained by coupling part of the emitted LED light into the transistor base. The light output can be switched on and off by relatively low current pulses with 50 ns duration.

Inspec keywords: gallium arsenide; III-V semiconductors; light emitting diodes; optical bistability; electro-optical devices; integrated optics; monolithic integrated circuits; indium compounds

Other keywords: monolithic integration; three-terminal InGaAsP/InP LED-transistor device; electrooptical device; light-coupled bistable electro-optical device

Subjects: Light emitting diodes; Integrated optoelectronics; Electro-optical devices; Integrated optics

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