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Monolithic integration of InGaAsP/InP LED and transistor—a light-coupled bistable electro-optical device

Monolithic integration of InGaAsP/InP LED and transistor—a light-coupled bistable electro-optical device

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A new bistable electro-optical integrated three-terminal InGaAsP/InP LED-transistor device is presented. Bistability is obtained by coupling part of the emitted LED light into the transistor base. The light output can be switched on and off by relatively low current pulses with 50 ns duration.

References

    1. 1)
      • A.C. Carter , N. Forbes , R.C. Goodfellow . Monolithic integration of optoelectronic, electronic and passive components in GaAlAs/GaAs multilayers. Electron. Lett. , 72 - 74
    2. 2)
      • T. Fukuzawa , M. Nakamura , M. Hirao , T. Kuroda , J. Umeda . Monolithic integration of a GaAlAs injection laser with a Schottky-gate field effect transistor. Appl. Phys. Lett. , 181 - 183
    3. 3)
      • H. Grothe , W. Harth , R.TH. Kersten , T. Lehiep , W. Proebster , M. Rocks , M. Schneiderheinze . Transmission experiments and system calculations using 1.3 μm LED. J. Opt. Commun. , 63 - 66
    4. 4)
      • Y. Ogawa , H. Ito , H. Inaba . New bistable optical device using semiconductor laser diode. Jpn. J. Appl. Phys. , L646 - L648
    5. 5)
      • I. Ury , S. Margarit , M. Yust , A. Yariv . Monolithic integration of an injection laser and a metal semiconductor field effect transistor. Appl. Phys. Lett. , 430 - 431
    6. 6)
      • O. Wada , T. Sanada , T. Sakurai . Monolithic integration of an AlGaAs/GaAs DH LED with a GaAs FET driver. IEEE Electron. Dev. Lett. , 305 - 307
    7. 7)
      • Y. Ogawa , H. Ito , H. Inaba . Bistable optical device using a light emitting diode. Appl. Opt. , 1878 - 1880
    8. 8)
      • J.A. Copeland , A.G. Dentai , T.P. Lee . P-n-p-n optical detectors and light-emitting diodes. IEEE J. Quantum Electron. , 810 - 813
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