%0 Electronic Article %A D.R. Scifres %A C. Lindström %A R.D. Burnham %A W. Streifer %A T.L. Paoli %K laser diode %K phase locked laser %K low reflective front facet coating %K room temperature operation %K single mirror %K GaAlAs %K III-V semiconductor %K multiple quantum well laser %K power output 2.6 W CW %K CW %K highly reflective rear facet coating %K wavelength 836.5 nm %K semiconductor laser arrays %K MQW laser %X A phase-locked multiple-quantum-well (GaAl)As injection laser with a highly reflective rear facet coating and a low reflective front facet coating is reported to emit 2.6 W CW at room temperature from the front facet. %@ 0013-5194 %T Phase-locked (GaAl)As laser diode emitting 2.6 W CW from a single mirror %B Electronics Letters %D March 1983 %V 19 %N 5 %P 169-171 %I Institution of Engineering and Technology %U https://digital-library.theiet.org/;jsessionid=tgsf7yrr3pa4.x-iet-live-01content/journals/10.1049/el_19830118 %G EN