AlN capped annealing of Se and Sn implanted semi-insulating GaAs
AlN capped annealing of Se and Sn implanted semi-insulating GaAs
- Author(s): R. Bensalem ; N.J. Barrett ; B.J. Sealy
- DOI: 10.1049/el:19830080
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- Author(s): R. Bensalem 1 ; N.J. Barrett 1 ; B.J. Sealy 1
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View affiliations
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Affiliations:
1: Department of Electronic & Electrical Engineering, University of Surrey, Guildford, UK
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Affiliations:
1: Department of Electronic & Electrical Engineering, University of Surrey, Guildford, UK
- Source:
Volume 19, Issue 3,
3 February 1983,
p.
112 – 113
DOI: 10.1049/el:19830080 , Print ISSN 0013-5194, Online ISSN 1350-911X
High-dose room-temperature implants of Se and Sn in undoped semi-insulating GaAs have been pulse-annealed at 1000°C using AlN as an encapsulant. Good electrical results and an improved surface quality were achieved compared with the use of CVD Si3N4 layers.
Inspec keywords: annealing; gallium arsenide; III-V semiconductors; selenium; tin; ion implantation
Other keywords:
Subjects: Semiconductor doping; II-VI and III-V semiconductors; Doping and implantation of impurities
References
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