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High-dose room-temperature implants of Se and Sn in undoped semi-insulating GaAs have been pulse-annealed at 1000°C using AlN as an encapsulant. Good electrical results and an improved surface quality were achieved compared with the use of CVD Si3N4 layers.
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http://iet.metastore.ingenta.com/content/journals/10.1049/el_19830080
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