One watt CW visible single-quantum-well lasers

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One watt CW visible single-quantum-well lasers

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We report room-temperature CW high output power (1 W) at ~ 7770 Å from OM-VPE-grown ultra-thin single-quantum (~60 Å)-well lasers. The devices are broad-area (250 × 210 μm) lasers with a quantum-well GaAlAs active region doped with Mg, and with applied high reflective and low reflective mirror facets. For an output power of 1 W from the emitting facet, the DC-to-light conversion efficiency is as high as 21%.

Inspec keywords: gallium arsenide; semiconductor junction lasers; magnesium; III-V semiconductors; aluminium compounds; vapour phase epitaxial growth

Other keywords: 1 W; Mg; III-V semiconductor; GaAlAs; OM-VPE growth; mirror facets; CW visible single-quantum-well lasers

Subjects: Lasing action in semiconductors; Chemical vapour deposition; Semiconductor lasers; Epitaxial growth

References

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      • R.D. Burnham , W. Streifer , D.R. Scifres , C. Lindström , T.L. Paoli . Low-threshold single-quantum-well (60 Å) GaAlAs lasers grown by MO-CVD with Mg as a p-type dopant. Electron. Lett. , 1095 - 1097
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