Study of deep level in bulk P-InP by admittance spectroscopy

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Study of deep level in bulk P-InP by admittance spectroscopy

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© The Institution of Electrical Engineers
Published

We report the application of diode admittance spectroscopy in characterising traps in Mg-doped InP. Measurements performed on Au-InP Schottky diodes have identified a hole trap located 0.15 eV above the valence band of InP. Other characteristic parameters such as trap density and hole capture cross-section have also been determined, with results suggesting hole capture at a neutral trapping centre.

Inspec keywords: hole traps; indium compounds; deep levels; III-V semiconductors

Other keywords: hole trap; diode admittance spectroscopy; trap density; deep level; hole capture cross-section; bulk P-InP; III-V semiconductors; InP:Mg; Au-InP Schottky diodes

Subjects: Electrical conductivity of II-VI and III-V semiconductors; Charge carriers: generation, recombination, lifetime, and trapping (semiconductors/insulators); II-VI and III-V semiconductors; Impurity and defect levels in tetrahedrally bonded nonmetals

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