© The Institution of Electrical Engineers
A Monte Carlo particle simulation of a 0.25 μm-long gate (and 0.25 μm-long channel) GaAs MESFET having a practical doping density and sitting on a substrate is carried out. Extremely high values of gm and Idss of 643 mS/mm and 5.35 mA/20 μm were obtained. The near-ballistic nature of the electron transport in the FET was confirmed.
References
-
-
1)
-
R. Fauquembergue ,
M. Pernisek ,
E. Constant
.
Monte-Carlo simulation of space-charge injection FET.
Electron. Lett.
,
670 -
671
-
2)
-
R.A. Warriner
.
Computer simulation of gallium arsenide field-effect transistors using Monte-Carlo methods.
IEE Proc. I, Solid-State & Electron. Dev.
,
105 -
110
-
3)
-
Hockney, R.W.: `POT4—a fast direct Poisson-solver for the rectangle allowing some mixed boundary conditions and internal electrodes', RC-2870, IBM Res. report, .
-
4)
-
W. Shockley
.
A unipolar “field-effect” transistor.
Proc. IRE
,
1365 -
1376
-
5)
-
Matsumoto, K., Hashizume, N., Atoda, N., Tomizawa, K., Kurosu, T., Iida, M.: `Submicron-gate self-aligned GaAs FET by ion implantation', Presented at the Symposium on gallium arsenide and related compounds, 1982, D-1, Albuquerque USA.
-
6)
-
K. Yamasaki ,
K. Asai ,
T. Mizutani ,
K. Kurumada
.
Self-align implantation for n+-layer technology (SAINT) for high-speed GaAs ICs.
Electron. Lett.
,
119 -
121
-
7)
-
Y. Awano ,
K. Tomizawa ,
N. Hashizume ,
M. Kawashima
.
Monte Carlo particle simulation of GaAs submicron n+-i-n+ diode.
Electron. Lett.
,
133 -
135
-
8)
-
K. Tomizawa ,
Y. Awano ,
N. Hashizume ,
M. Kawashima
.
Monte Carlo simulation of GaAs submicron n+-i(n)-n+ diode.
IEE Proc.I, Solid-State & Electron. Dev.
,
131 -
136
-
9)
-
J.G. Ruch ,
W. Fawcett
.
Temperature dependence of the transport properties of gallium arsenide determined by a Monte Carlo method.
J. Appl. Phys.
,
3843 -
3849
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19830014
Related content
content/journals/10.1049/el_19830014
pub_keyword,iet_inspecKeyword,pub_concept
6
6