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Formation of shallow photodiodes by implantation of boron into mercury cadmium telluride

Formation of shallow photodiodes by implantation of boron into mercury cadmium telluride

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Hall-effect measurements on p-type MCT implanted with 1 × 1014 B+/cm2 at 150 keV show that an abrupt junction is formed at a depth of 0.6 ± 0.12 μm after annealing at 230° for 7 min with a ZnS cap. Prior to the anneal the carrier profile was graded and extended to a depth of 5.0 ± 1.0 μm. Photodiodes have been formed by a dual implant of 5 × 1014 B+/cm2 at 100 keV and 50 keV, and after annealing a five-fold improvement in RoA has been measured to give a value of 1.2 Ωcm2.

References

    1. 1)
      • R.K. Willardson , A.C. Beer . (1981) Mercury cadmium telluride, Semiconductors and semimetals series.
    2. 2)
      • L.O. Bubulac , W.E. Tennant , S.H. Shin , C.C. Wang , M. Lanir , E.R. Gertner , E.D. Marshall . Ion implantation study of HgCdTe. Jpn. J. Appl. Phys.
    3. 3)
      • L.O. Bubulac , W.E. Tennant , R.A. Riedel , T.J. Magee . Behaviour of implantation induced defects in HgCdTe. J. Vac. Sci. Technol.
    4. 4)
      • Destefanis, G.L., Boch, R., Roussille, R.: `Electrical and optical properties of ion implanted Hg', Proc. Int. Conf. on II–VI compounds, 1982, Durham, England.
    5. 5)
      • S.Y. Wu , W.J. Choyke , W.J. Takei , A.J. Noreika , M.H. Francombe . Effects of implantation and annealing temperatures on implantation induced damage in HgCdTe. J. Vac. Sci. Technol.
    6. 6)
      • Buehler, M.G.: Rep. EEL-66-064, Stanford Res., 1966.
    7. 7)
      • L.J. van der Pauw . A method of measuring specific resistivitgy and Hall effects of discs of arbitrary shape. Philips Res. Rep.
    8. 8)
      • J. Lindhard , V. Nielsen , M. Scharff , F.Y.S. Matt , K.G.L. Medd . Danske Videnskab Selskab.
    9. 9)
      • G. Dearnaley , J.H. Freeman , R.S. Nelson , J. Stephen . (1973) , Ion implantation.
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