Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Dielectric guiding due to an inverted gain profile in GaAs/GaAlAs lasers

Dielectric guiding due to an inverted gain profile in GaAs/GaAlAs lasers

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Electrical Engineers
Published

The waveguiding mechanism in a new GaAs/GaAlAs laser structure has been investigated by near-field and astigmatism measurements. The waist of the beam was observed in front of the mirror facet of the laser, indicating that the inverted gain profile is responsible for dielectric guiding along the junction plane.

Inspec keywords: laser modes; semiconductor junction lasers; aluminium compounds; III-V semiconductors; gallium arsenide

Other keywords: dielectric waveguiding mechanism; near field measurement; astigmatism measurements; inverted gain profile; semiconductor laser; junction plane; GaAs/GaAlAs lasers; built-in refractive index step; beam waist; transverse mode properties

Subjects: Semiconductor lasers; Lasing action in semiconductors

References

    1. 1)
      • D.D. Cook , F.R. Nash . Gain induced guiding and astigmatic output beam of GaAs lasers. J. Appl. Phys. , 1660 - 1672
    2. 2)
      • P.A. Kirkby , A.R. Goodwin , G.H.B. Thompson , P.R. Selway . Observation of self-focusing in stripe geometry semiconductor lasers and the development of a comprehensive model of their operation. IEEE J. Quantum Electron. , 705 - 719
    3. 3)
      • T.H. Zachos , J.E. Ripper . Resonant modes of GaAs junction lasers. IEEE J. Quantum Electron. , 29 - 37
    4. 4)
      • P. Brosson , R. Tsu , J.E. Ripper . Spatially resolved emission in stripe geometry GaAlAs DH lasers. Solid-State Commun. , 635 - 640
    5. 5)
      • B.W. Hakki . Near-field emission from GaAs double-heterostructure laser mirrors. IEEE J. Quantum Electron. , 149 - 154
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19820635
Loading

Related content

content/journals/10.1049/el_19820635
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Print this page
This is a required field
Please enter a valid email address