Dielectric guiding due to an inverted gain profile in GaAs/GaAlAs lasers

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Dielectric guiding due to an inverted gain profile in GaAs/GaAlAs lasers

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© The Institution of Electrical Engineers
Published

The waveguiding mechanism in a new GaAs/GaAlAs laser structure has been investigated by near-field and astigmatism measurements. The waist of the beam was observed in front of the mirror facet of the laser, indicating that the inverted gain profile is responsible for dielectric guiding along the junction plane.

Inspec keywords: laser modes; semiconductor junction lasers; aluminium compounds; III-V semiconductors; gallium arsenide

Other keywords: dielectric waveguiding mechanism; near field measurement; astigmatism measurements; inverted gain profile; semiconductor laser; junction plane; GaAs/GaAlAs lasers; built-in refractive index step; beam waist; transverse mode properties

Subjects: Semiconductor lasers; Lasing action in semiconductors

References

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      • D.D. Cook , F.R. Nash . Gain induced guiding and astigmatic output beam of GaAs lasers. J. Appl. Phys. , 1660 - 1672
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      • P.A. Kirkby , A.R. Goodwin , G.H.B. Thompson , P.R. Selway . Observation of self-focusing in stripe geometry semiconductor lasers and the development of a comprehensive model of their operation. IEEE J. Quantum Electron. , 705 - 719
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      • T.H. Zachos , J.E. Ripper . Resonant modes of GaAs junction lasers. IEEE J. Quantum Electron. , 29 - 37
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      • P. Brosson , R. Tsu , J.E. Ripper . Spatially resolved emission in stripe geometry GaAlAs DH lasers. Solid-State Commun. , 635 - 640
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      • B.W. Hakki . Near-field emission from GaAs double-heterostructure laser mirrors. IEEE J. Quantum Electron. , 149 - 154
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