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Influence of pressure on temperature sensitivity of GaxIn1−xAsyP1−y lasers

Influence of pressure on temperature sensitivity of GaxIn1−xAsyP1−y lasers

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At high temperatures the threshold current of GaxIn1−xAsyP1−y stripe lasers shows a more marked decrease with pressure than at room temperature. The temperature sensitivity term T0 increases from about 65 K at atmospheric pressure to about 115 K at 7 kbar. The results can be best interpreted in terms of intervalence band absorption.

Inspec keywords: semiconductor junction lasers; gallium arsenide; indium compounds; III-V semiconductors; high-pressure effects in solids

Other keywords: threshold current; stripe lasers; intervalence band absorption; GaxIn1-xAsyP1-y lasers; temperature sensitivity; semiconductor laser; pressure effects

Subjects: Semiconductor lasers; Lasing action in semiconductors

References

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      • Y. Horikoshi , Y. Furukawa . Temperature sensitive threshold current of InGaAsP/InP double heterostructure lasers. Jpn. J. Appl. Phys. , 809 - 815
    2. 2)
      • A.R. Adams , M. Asada , Y. Suemasu , S. Arai . The temperature dependence of the efficiency and threshold current of In GaxIn1−xAsyP1−ylasers related to intervalence band absorption. Jpn. J. Appl. Phys. , L621 - L624
    3. 3)
      • M. Yano , H. Imai , M. Takusagawa . Analysis of electrical, threshold and temperature characteristics of InGaAsP/InP double-heterojunction lasers. IEEE J. Quantum Electron. , 1954 - 1963
    4. 4)
      • D. Patel , A.R. Adams , P.D. Greene , G.D. Henshall . Pressure dependence of threshold current in GaxIn1−xAsyP1−y lasers. Electron. Lett. , 527 - 528
    5. 5)
      • G.H.B. Thompson , G.D. Henshall . Non-radiative carrier loss and temperature sensitivity of threshold in 1.27 μm (GaIn)(AsP)/InP DH lasers. Electron. Lett. , 42 - 44
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