Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Low field mobility, effective saturation velocity and performance of submicron GaAs MESFETs

Low field mobility, effective saturation velocity and performance of submicron GaAs MESFETs

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

An analytical model is proposed which relates the transconductance of submicron GaAs MESFETs to a low field mobility, effective electron saturation velocity and device geometry and doping. The model predicts that the effective saturation velocity determines the performance of the devices at relatively high pinch-off voltages (Vpo > 5 V). At smaller pinch-off voltages (especially for enhancement-mode devices) the low field mobility becomes increasingly important, leading to additional advantages of GaAs devices over Si devices. Another prediction is a higher transconductance in thinner and higher-doped devices. This effect is also more important for devices with low pinch-off voltages. The obtained results may be used to deduce the effective values of the electron drift velocity in GaAs MESFETs as a function of the gate length.

References

    1. 1)
      • M.S. Shur , L.F. Eastman . I-V characteristics of GaAs MESFET with nonuniform doping profile. IEEE Trans. , 455 - 461
    2. 2)
      • M.S. Shur . Analytical model of GaAs MESFETs. IEEE Trans. , 612 - 618
    3. 3)
      • Turner, J.A., Wilson, B.L.H.: `Implications of carrier velocity saturation in a gallium arsenide field-effect transistor', Proc. GaAs,Inst. Phys. and Phys. Soc, 1968, p. 195–204.
    4. 4)
      • P.L. Hower , N.G. Bechtel . Current saturation and small-signal characteristics of GaAs field-effect transistors. IEEE Trans. , 213 - 220
    5. 5)
      • M.J. Helix , S.A. Jamison , C. Chao , M. Shur . Fanout and speed of GaAs SDFL logic. J. Solid-State Circuits
    6. 6)
      • T.J. Drummond , H. Morkoc , A.Y. Cho . Dependence of electron mobility on spatial separation of electrons and donors in AlxGa1−xAs/GaAs heterostructures. J. Appl. Phys. , 1380 - 1386
    7. 7)
      • K. Lehovec , R. Zuleeg . Voltage-current characteristics of GaAs J-FETS in the hot electron range. Solid-State Electron. , 1415 - 1426
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19820619
Loading

Related content

content/journals/10.1049/el_19820619
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address