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Generation of single-longitudinal-mode subnanosecond light pulses by high-speed current modulation of monolithic two-section semiconductor lasers

Generation of single-longitudinal-mode subnanosecond light pulses by high-speed current modulation of monolithic two-section semiconductor lasers

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© The Institution of Electrical Engineers
Published

The spectral behaviour of monolithic two-section GaInAsP/InP lasers is studied. Single-longitudinal-mode light pulses of less than 750 ps length are produced by driving the long section of the laser only or by prebiasing the long cavity and modulating the short section with a current pulse of 1 ns halfwidth. The wavelength of the output light can be changed by varying the operation temperature or the prebias level.

Inspec keywords: semiconductor junction lasers; gallium arsenide; III-V semiconductors; optical modulation; indium compounds

Other keywords: semiconductor lasers; spectral behaviour; monolithic two-section GaInAsP/InP lasers; single-longitudinal-mode subnanosecond light pulses; high-speed current modulation

Subjects: Semiconductor lasers; Lasing action in semiconductors; Laser beam modulation, pulsing and switching; mode locking and tuning

References

    1. 1)
      • L.A. Coldren , B.I. Miller , K. Jga , J. Rentschler . Monolithic two-Section GaInAsP/InP active-optical-resonator devices formed by reactive ion etching. Appl. Phys., Lett. , 315 - 317
    2. 2)
      • K. Utaka , KE. Kobayashi , Y. Suematsu . Lasing characteristics of 1.5–1.6 μm GaInAsP/InP integrated twin-guide lasers with first-order distributed Bragg reflectors. IEEE J. Quantum Electron. , 651 - 658
    3. 3)
      • Y. Sakakibara , K. Furuya , K. Utaka , Y. Suematsu . Single-mode oscillation under high-speed direct modulation in GaInAsP/InP integrated twin-guide lasers with distributed Bragg reflectors. Electron. Lett. , 456 - 458
    4. 4)
      • K.R. Preston , K.C. Woollard , K.H. Cameron . External cavity controlled single longitudinal mode laser transmitter module. Electron. Lett. , 931 - 933
    5. 5)
      • L.A. Coldren , K. Furuya , B.I. Miller , J.A. Rentschler . Etched mirror and grove-coupled GaInAsP/InP laser devices for integrated optics. IEEE J. Quantum Electron.
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