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Analysis of efficiency limitations in high-low emitter back surface field silicon solar cells

Analysis of efficiency limitations in high-low emitter back surface field silicon solar cells

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Analytical and numerical models have been used to analyse the electrical behaviour of HLE-BSF n+-n-p-p+ silicon solar cells. It is shown that this structure should have lower open-circuit voltage values than the simple HLE solar cell due to the recombination current in the p+ region. Back surface passivation is proposed as a means to improve the Voc, that can be as high as 650 mV.

Inspec keywords: elemental semiconductors; solar cells; silicon; semiconductor device models

Other keywords: passivation; elemental semiconductor; open-circuit voltage; high-low emitter back surface field Si solar cells; efficiency limitations; electrical behaviour; numerical models

Subjects: Semiconductor device modelling, equivalent circuits, design and testing; Solar cells and arrays; Photoelectric conversion; solar cells and arrays

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