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Analysis of efficiency limitations in high-low emitter back surface field silicon solar cells

Analysis of efficiency limitations in high-low emitter back surface field silicon solar cells

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Analytical and numerical models have been used to analyse the electrical behaviour of HLE-BSF n+-n-p-p+ silicon solar cells. It is shown that this structure should have lower open-circuit voltage values than the simple HLE solar cell due to the recombination current in the p+ region. Back surface passivation is proposed as a means to improve the Voc, that can be as high as 650 mV.

References

    1. 1)
      • Fossum . Development of high efficiency P-N-N+ back surface field silicon solar cells. Appl. Phys. Lett. , 238 - 240
    2. 2)
      • Lindholm, : `Design considerations for silicon HLE solar cells', 13th IEEE Photov. Spec. Conf., 1978, p. 1300–1305.
    3. 3)
      • Fossum . The importance of surface recombination and energy band-gap narrowing in P-N junction silicon solar cells. IEEE Trans. , 1294 - 1298
    4. 4)
      • Hauser . Minority carrier reflecting properties of semiconductor high-low junction. Solid State Electron. , 715 - 716
    5. 5)
      • Prat, L.: `High efficiency silicon photovoltaic structures numerical analysis', 1981, Ph.D. dissertation, Barcelona Polytechnic University.
    6. 6)
      • An-ti-Chai, : `Back surface reflectors for solar cells', 14th IEEE. Photovo. Spec. Conf., 1980, p. 156.
    7. 7)
      • Shibib . Heavily doped transparent emitter silicon P-N junction solar cells diodes and transistors. IEEE Trans. , 959 - 965
    8. 8)
      • Gwyn . The analysis of radiation effects in semiconductor junction devices. IEEE Trans.
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