Comparison of interface state density in MIS structure deduced from DLTS and Terman measurements

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Comparison of interface state density in MIS structure deduced from DLTS and Terman measurements

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Interface state impedance has been theoretically predicted to introduce spurious detailed structures in the trap density curves when determined by high-frequency C/V measurements (Terman method). This is experimentally demonstrated on irradiated MOS structures. Terman analysis of these MOS capacitors presents a peak in the trap density near the conduction band, while a flat continuum is found by deep level transient spectroscopy (DLTS). A numerical simulation shows that this discrepancy can be taken into account by the only interface state impedance effect.

Inspec keywords: deep level transient spectroscopy; metal-insulator-semiconductor structures; interface electron states; electronic density of states

Other keywords: Terman measurements; DLTS; MOS capacitors; MIS structure; interface state density; interface state impedance effect; high-frequency C/V measurements

Subjects: Surface impurity and defect levels; energy levels of adsorbed species; Impurity and defect levels; Metal-insulator-semiconductor structures; Electrical properties of metal-insulator-semiconductor structures; Electronic density of states determinations

References

    1. 1)
      • P.S. Winokur , H.E. Boesch . Interface-state generation in radiation-hard oxides. IEEE Trans. , 1647 - 1650
    2. 2)
      • E. Yamaguchi , T. Kobayashi . New method for determining distribution of interface states in an MIS system. Electron. Lett. , 290 - 291
    3. 3)
      • K. Yamasaki , M. Yoshida , T. Sugano . Deep level transient spectroscopy of bulk traps and interface states in Si MOS diodes. Jpn. J. Appl. Phys. , 113 - 122
    4. 4)
      • Johnson, N.M., Bartelink, D.J., Schultz, M.: `Transient capacitance measurements of electronic states at the Si-SiO', Proc. Conf. physics of SiO2 and its interface, 1978, Yorktown Heights , p. 421–427.
    5. 5)
      • D. Lubsenz , A. Kodolny , Y.J. Shacham-Diamand . Automated measurement and analysis of MIS interfaces in narrow-bandgap semiconductors. IEEE Trans. , 546 - 551
    6. 6)
      • J.G. Gwyn . Model for radiation-induced charge trapping and annealing in the oxide layer of MOS device. J. Appl. Phys.
    7. 7)
      • L.M. Terman . An investigation of surface states at a silicon-silicon oxide interface employing metal-oxide-silicon diodes. Solid-State Electron. , 285 - 299
    8. 8)
      • G. Declerk , Jay Zemel . (1979) , Nondestructive evaluation of semiconductor material and devices.
    9. 9)
      • E. Rosencher , D. Bois . Change of interface state spectrum in Al-SiO2-Si structures with biasing during electron irradiation. Appl. Phys. Lett. , 601 - 603
    10. 10)
      • E.H. Nicollian , A. Goetzberger . The Si-SiO2 interface—Electrical properties as determined by the metal-insulator-silicon conductance technique. Bell Syst. Tech. J. , 1055 - 1133
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