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Be-implanted p-n junctions in Ga0.47In0.53As

Be-implanted p-n junctions in Ga0.47In0.53As

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The fabrication of Be-implanated Ga0.47In0.53As p-n diodes is described. After annealing the diodes exhibit saturation current densities of 1.5×10−4 A/cm−2 and an ideality factor of 1.6. The built-in voltage of ̃0.7 V demonstrates the feasibility of their application to electronic devices. SIMS and C/V measurements are consistent with theoretical data.

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