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Single-carrier-type dominated impact ionisation in multilayer structures

Single-carrier-type dominated impact ionisation in multilayer structures

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A new structure for III-V avalanche photodetectors in which multiplication is dominated by a single-carrier type is proposed. Calculations for a GaAs-AlGaAs detector are reported predicting multiplication dominated by electrons. The reason for this is that electrons are injected into GaAs multiplication layers from high-electric-field AlGaAs layers, while holes are injected into the GaAs layers from low-electric-field AlGaAs layers.


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      • R. Chin , N. Holonyak , G.E. Stillman , J.Y. Tang , K. Hess . Impact ionisation in multilayered heterojunction structures. Electron. Lett. , 467 - 469

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