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Single-carrier-type dominated impact ionisation in multilayer structures

Single-carrier-type dominated impact ionisation in multilayer structures

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© The Institution of Electrical Engineers
Published

A new structure for III-V avalanche photodetectors in which multiplication is dominated by a single-carrier type is proposed. Calculations for a GaAs-AlGaAs detector are reported predicting multiplication dominated by electrons. The reason for this is that electrons are injected into GaAs multiplication layers from high-electric-field AlGaAs layers, while holes are injected into the GaAs layers from low-electric-field AlGaAs layers.

Inspec keywords: gallium arsenide; impact ionisation; aluminium compounds; III-V semiconductors; avalanche photodiodes; photodetectors

Other keywords: electron multiplication; GaAs-AlGaAs detector; impact ionisation; avalanche photodetectors; multilayer structures; avalanche photodiode; carrier multiplication; III-V semiconductor

Subjects: II-VI and III-V semiconductors; Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; Detection of radiation (bolometers, photoelectric cells, i.r. and submillimetre waves detection); Photodetectors; Photoelectric devices

References

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      • F. Capasso , W.T. Tsang , A.L. Hutchinson , G.F. Williams . Appl. Phys. Lett.. Appl. Phys. Lett. , 38 - 40
    2. 2)
      • G. Baraff . Phys. Rev.. Phys. Rev. , 2507 - 2517
    3. 3)
      • R.J. Mcintyre . Multiplication noise in uniform avalanche diodes. IEEE Trans. , 164 - 167
    4. 4)
      • W. Shockley . Problems related to P-N junctions in silicon. Solid State Electron. , 35 - 67
    5. 5)
      • R. Chin , N. Holonyak , G.E. Stillman , J.Y. Tang , K. Hess . Impact ionisation in multilayered heterojunction structures. Electron. Lett. , 467 - 469
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