Stable monolithic GaAs FET oscillator

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Stable monolithic GaAs FET oscillator

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© The Institution of Electrical Engineers
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A monolithic X-band GaAs FET oscillator has been developed. Passive circuit components are lumped capacitors and inductors on semi-insulating GaAs; the chip size is 1.2 × 1.4 mm2. Stabilised with a Ba2Ti9O20 dielectric resonator, the oscillator delivers more than 30 mW output power at 10.8 GHz with a maximum chip efficiency of 20%. The frequency drift is better than 1 × 10−6/K from −20°C to 80°C.

Inspec keywords: gallium arsenide; field effect integrated circuits; solid-state microwave circuits; microwave oscillators; III-V semiconductors

Other keywords: lumped capacitors; III-V semiconductor; inductors; Ba2Ti9O20 dielectric resonator; monolithic X-band GaAs FET oscillator; 10.8 GHz; passive circuit components

Subjects: Solid-state microwave circuits and devices; Other field effect integrated circuits; Oscillators

References

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      • C.S. Aitchison . Lumped circuit elements at microwave frequencies. IEEE Trans. , 928 - 937
    2. 2)
      • H.Q. Tserng , H.M. Macksey . Performance of monolithic GaAs FET oscillators at J-band. IEEE Trans. , 163 - 165
    3. 3)
      • Komatsu, Y.: `A frequency stabilized MIC oscillator using a newly developed dielectric resonator', Digest techn. papers, IEEE MTT-S symposium, 1981, Los Angeles, p. 313–315.
    4. 4)
      • Tsironis, C., Lesartre, P.: `X and Ku-band dual gate MESFET oscillators stabilized using dielectric resonators', Proc. 11th Eur. micr. conf., 1981, Amsterdam, p. 469–474.
    5. 5)
      • J.S. Joshi , J.R. Cockrill , J.A. Turner . Monolithic microwave gallium arsenide FET oscillators. IEEE Trans. , 158 - 162
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