Encapsulant-free annealing of ion-implanted GaP

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Encapsulant-free annealing of ion-implanted GaP

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© The Institution of Electrical Engineers
Published

GaP diodes were fabricated by Mg+ implantation and controlled atmosphere annealing. At room temperature, these diodes emit green light under forward bias, with an ideality factor of 2.0. Reverse breakdown voltages are 180 V, with a measured reverse leakage current density of 4.8 × 10−9 A/cm2 at a bias of −3 V. The diodes retain good electrical characteristics at 400°C.

Inspec keywords: ion implantation; semiconductor technology; annealing; III-V semiconductors; gallium compounds; magnesium

Other keywords: ideality factor; high temperature electronics; Mg+ implantation; encapsulant free annealing; operation to 400 degree C; controlled atmosphere annealing; GaP LED; ion-implanted GaP

Subjects: Semiconductor doping; II-VI and III-V semiconductors

References

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      • Mandal, R.P., Scoble, W.R.: `Ion-implanted gallium-arsenide with proximity cap annealing', Institute of Physics and Physical Society Conference Series, 1979, 45, p. 462–471.
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      • R.M. Biefeld . The preparation of device quality gallium phosphide by metal-organic chemical vapor deposition. J. Crystal Growth
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      • T.E. Zipperian , L.R. Dawson . A gallium-phosphide high temperature bipolar junction transistor. Appl. Phys. Lett.
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      • D.J. Lank , B.C. Dobbs , Y.S. Park . Electrical profiles of magnesium-ion-implanted GaP. , 1318 - 1324
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