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A GaAs 256×1-bit static RAM with 2000 FETs organised in E/D-type DCFL circuits was successfully fabricated. A planar device structure was realised by using selective ion implantation and dielectric intermediate lift-off technology. The access time and the power dissipation were 50 ns and 9.4 mW, respectively.
Inspec keywords: gallium arsenide; III-V semiconductors; integrated memory circuits; field effect integrated circuits; ion implantation; random-access storage
Other keywords:
Subjects: Memory circuits; Other field effect integrated circuits; Semiconductor storage