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Optimisation of implantation conditions for the formation of buried SiO2 layers in silicon

Optimisation of implantation conditions for the formation of buried SiO2 layers in silicon

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The substrate temperature dependence of the IR transmission spectra of buried silicon dioxide layers formed by high dose ion implantation (~1017) was investigated for an ion dose ranging from 1017 to 1018 ions/cm2 at 250°C of 16O+ at 100 keV energy. The IR spectra indicate that the silicon/silicon-dioxide/silicon can be obtained after thermal annealing treatment of the implanted sample for 10 mm in hydrogen ambient at 1100°C.

Inspec keywords: annealing; elemental semiconductors; silicon compounds; silicon; semiconductor doping; ion implantation; infrared spectra of inorganic solids

Other keywords: O16+; thermal annealing treatment; optimisation; substrate temperature dependence; elemental semiconductors; Si-SiO2-Si; ion dose; buried SiO2 layers; LSI; Si; ion implantation; IR transmission spectra

Subjects: Doping and implantation of impurities; Electrical conductivity of elemental semiconductors; Elemental semiconductors; Semiconductor doping; Infrared and Raman spectra in inorganic crystals

References

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      • El-Dhaher, A.H.G.: 1974, Ph.D thesis, University of Kent, Canterbury.
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      • H.W. Lam , R.F. Pinizzotto , H.T. Yuan , D.W. Bellavance . Characteristics of MOSFETS fabricated in silicon-on-insulator material formed by high-dose oxygen ion implantation. Electron. Lett. , 356 - 358
    3. 3)
      • Badawi, M.H.: 1975, Ph.D thesis, University of Kent, Canterbury.
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      • K. Izumi , M. Doken , H. Ariyoshi . CMOS devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon. Electron. Lett.
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      • Das, K., Butcher, J.B., Anand, V.: `Silicon/oxide/silicon structure by oxygen implantation epitaxy for dielectric isolation in ICs', To be presented at CVD VIII conference.
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      • T. Kubota , M. Kmoshida . Precise measurements of the infra-red near 9 μm obtained from R.F. sputtered silicon oxide (SiO2) films. Jpn. J. Appl. Phys.
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