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Electron mobility in degenerate tellurium doped In0.53Ga0.47As LPE layers

Electron mobility in degenerate tellurium doped In0.53Ga0.47As LPE layers

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Tellurium doped In0.53Ga0.47As epitaxial layers have been grown by LPE in the range n=1018−4×1019 cm−3; the distribution coefficient of tellurium was found to be 0.1. These layers exhibit a two to three times higher mobility than InP or GaAs doped to the same level. Theoretically calculated values of mobility taking account of the degenerate and nonparabolic conduction band conditions are compared with the experimental data.

Inspec keywords: III-V semiconductors; tellurium; gallium arsenide; semiconductor doping; indium compounds; carrier mobility; semiconductor epitaxial layers; degenerate semiconductors; liquid phase epitaxial growth; electronic conduction in crystalline semiconductor thin films

Other keywords: degenerate conduction band; distribution coefficient; electron mobility; III-V semiconductors; nonparabolic conduction band; In0.53Ga0.47As:Te LPE layers

Subjects: Thin film growth, structure, and epitaxy; Low-field transport and mobility; piezoresistance (semiconductors/insulators); Electrical conductivity of II-VI and III-V semiconductors; II-VI and III-V semiconductors; Epitaxial growth; Electronic properties of semiconductor thin films; Semiconductor doping

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