Novel deposit/spin waveguide interconnection (DSWI) technique for semiconductor integrated optics
Novel deposit/spin waveguide interconnection (DSWI) technique for semiconductor integrated optics
- Author(s): K. Furuya ; B.I. Miller ; L.A. Coldren ; R.E. Howard
- DOI: 10.1049/el:19820140
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- Author(s): K. Furuya 1 ; B.I. Miller 1 ; L.A. Coldren 1 ; R.E. Howard 1
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View affiliations
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Affiliations:
1: Bell Laboratories, Holmdel, USA
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Affiliations:
1: Bell Laboratories, Holmdel, USA
- Source:
Volume 18, Issue 5,
4 March 1982,
p.
204 – 205
DOI: 10.1049/el:19820140 , Print ISSN 0013-5194, Online ISSN 1350-911X
We propose an efficient and simple optical interconnection between active semiconductor components by deposition and spin coating. The demonstration shows a low-threshold (2.0 kA/cm2) and high-coupling (81%) operation of a laser-polyimide/SiO2 slab waveguide integrated on a GaInAsP/InP chip.
Inspec keywords: integrated optics; indium compounds; gallium arsenide; aluminium compounds; III-V semiconductors
Other keywords:
Subjects: Integrated optics; Integrated optics
References
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