Self-align implantation for n+-layer technology (SAINT) for high-speed GaAs ICs

Self-align implantation for n+-layer technology (SAINT) for high-speed GaAs ICs

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A new GaAs MESFET structure with n+-implanted layers and a self-aligned gate has been developed by dielectric lift-off technology with trilevel resist. The electrical characteristics are improved greatly by resistance reduction outside the channel under the gate. 280 mS/mm transconductance and 39.5 ps/gate propagation delay have been obtained.


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