Monolithic integration of optoelectronic, electronic and passive components in GaAlAs/GaAs multilayers
Monolithic integration of optoelectronic, electronic and passive components in GaAlAs/GaAs multilayers
- Author(s): A.C. Carter ; N. Forbes ; R.C. Goodfellow
- DOI: 10.1049/el:19820050
For access to this article, please select a purchase option:
Buy article PDF
Buy Knowledge Pack
IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.
Thank you
Your recommendation has been sent to your librarian.
- Author(s): A.C. Carter 1 ; N. Forbes 1 ; R.C. Goodfellow 1
-
-
View affiliations
-
Affiliations:
1: Allen Clark Research Centre, Plessey Research (Caswell) Limited, Towcester, UK
-
Affiliations:
1: Allen Clark Research Centre, Plessey Research (Caswell) Limited, Towcester, UK
- Source:
Volume 18, Issue 2,
21 January 1982,
p.
72 – 74
DOI: 10.1049/el:19820050 , Print ISSN 0013-5194, Online ISSN 1350-911X
The monolithic integration of LEDs, detectors, waveguides, resistors and FETs has been demonstrated in GaAlAs/GaAs multilayer structures. The resulting uncommitted optoelectronic integrated circuits have been operated in transmitter, receiver and repeater configurations.
Inspec keywords: III-V semiconductors; integrated optics; photodetectors; aluminium compounds; monolithic integrated circuits; gallium arsenide; light emitting diodes; optical communication equipment
Other keywords:
Subjects: Integrated optoelectronics; Integrated optics; Light emitting diodes; Photodetectors; Optical communication devices, equipment and systems; Integrated optics; Semiconductor integrated circuits; Optical communication
References
-
-
1)
- I. Ury , S. Margarit , M. Yust , A. Yariv . Monolithic integration of an injection laser and a metal semiconductor field effect transistor. Appl. Phys. Lett. , 430 - 431
-
2)
- J. Barnard , H. Ohno , C.E.C. Wood , L.F. Eastman . Integrated double heterostructure GaInAs photoreceiver with automatic gain control. IEEE Electron. Dev. Lett.
-
3)
- T. Fukuzawa , M. Nakamura , M. Hirao , T. Kuroda , J. Umeda . Monolithic integration of a GaAlAs injection laser with a Schottky gate field effect transistor. Appl. Phys. Lett. , 181 - 183
-
4)
- R.F. Leheny , R.E. Nahery , M.A. Pollack , A.A. Ballman , E.D. Bebe , J.C. Dewinter , R.J. Martin . Integrated InGaAs p-i-n FET photoreceiver. Electron. Lett. , 353 - 355
-
5)
- J. Katz , N. Bar-Chaim , P.C. Chen , S. Margalit , I. Ury , D. Wilt , M. Yust , A. Yariv . A monolithic integration of GaAs/GaAlAs bipolar transistor and heterostructure laser. Appl. Phys. Lett. , 211 - 213
-
6)
- R.C. Goodfellow , A.C. Carter , I. Griffith , R.R. Bradley . GaInAsP/InP fast high radiance 1.05–1.3 μm LEDs with efficient lens coupling to small numerical aperture silica optical fibres. IEEE Trans. Electron. Dev. , 1215 - 1219
-
1)
Related content
