Ion beam annealed As+ implanted silicon

Access Full Text

Ion beam annealed As+ implanted silicon

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Electrical Engineers
Published

As+ and Ar+ ion beams have been used to anneal silicon implanted with 6 × 1015 As+/cm2 at 170 keV. Samples were annealed by (i) Ar+ incident on the back face or (ii) direct heating by the dopant ions. Those annealed by (i) exhibited good crystallinity, a low sheet resistivity of 24.0 ± 0 1Ω/□ and no measurable change in the arsenic distribution.

Inspec keywords: recrystallisation annealing; ion implantation; silicon; ion beam effects; elemental semiconductors

Other keywords: good crystallinity; dopant ions; direct heating; Ar distribution; Ar+ ion beams; annealing; implanted Si; As+ ion beams; low sheet resistivity; 6*1015 As+ per cm2; IC technology

Subjects: Electrical conductivity of elemental semiconductors; Elemental semiconductors; Doping and implantation of impurities; Ion beam effects; Semiconductor doping

References

    1. 1)
      • R.A. Powell , T.O. Yep , R.T. Fulks . Activation of Ar implanted Si using an incoherent light source. Appl. Phys. Lett.
    2. 2)
      • D.A. Antoniadis , R.W. Dutton . Models for computer simulation of complete i.c. fabrication processes. IEEE J. Solid-State Circuits , 412 - 422
    3. 3)
      • P.L.F. Hemment . Sample contamination caused by sputtering during ion implantation. Vacuum
    4. 4)
      • Scovell, P.D.: `Pulsed thermal annealing of heavily implanted layers', ESSDERC '81, September 1981, Toulouse.
    5. 5)
      • Pollard, C.J., Carter, P.J., Speight, J.D.: `Crystallographic damage analysis of e-beam annealed silicon wafers', ESSDERC '81, September 1981, Toulouse.
    6. 6)
      • R.K. Surridge , B.J. Sealy , A.D.E. D'cruz , K.G. Stephens . (1977) Annealing kinetic of donor ions implanted into GaAs, GaAs and related compounds (Edinburgh) 1976.
    7. 7)
      • J.F. Gibbons , L.D. Hess , T.W. Sigmond . (1981) , Lasers and electron beam solid interactions and materials processing.
    8. 8)
      • R.T. Hodgson , J.E.E. Baglin , R. Pal , J.M. Neri , D.A. Hammer . Ion beam annealing of semiconductors. Appl. Phys. Lett.
    9. 9)
      • Finetti, M., Litti, R., Merli, P.G., Zignani, F.: `Self annealing of ion implanted Si—first experimental results', ESSDERC '81, September 1981, Toulouse.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19820040
Loading

Related content

content/journals/10.1049/el_19820040
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading