Ion beam annealed As+ implanted silicon
As+ and Ar+ ion beams have been used to anneal silicon implanted with 6 × 1015 As+/cm2 at 170 keV. Samples were annealed by (i) Ar+ incident on the back face or (ii) direct heating by the dopant ions. Those annealed by (i) exhibited good crystallinity, a low sheet resistivity of 24.0 ± 0 1Ω/□ and no measurable change in the arsenic distribution.