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As+ and Ar+ ion beams have been used to anneal silicon implanted with 6 × 1015 As+/cm2 at 170 keV. Samples were annealed by (i) Ar+ incident on the back face or (ii) direct heating by the dopant ions. Those annealed by (i) exhibited good crystallinity, a low sheet resistivity of 24.0 ± 0 1Ω/□ and no measurable change in the arsenic distribution.
References
-
-
1)
-
R.A. Powell ,
T.O. Yep ,
R.T. Fulks
.
Activation of Ar implanted Si using an incoherent light source.
Appl. Phys. Lett.
-
2)
-
D.A. Antoniadis ,
R.W. Dutton
.
Models for computer simulation of complete i.c. fabrication processes.
IEEE J. Solid-State Circuits
,
412 -
422
-
3)
-
P.L.F. Hemment
.
Sample contamination caused by sputtering during ion implantation.
Vacuum
-
4)
-
Scovell, P.D.: `Pulsed thermal annealing of heavily implanted layers', ESSDERC '81, September 1981, Toulouse.
-
5)
-
Pollard, C.J., Carter, P.J., Speight, J.D.: `Crystallographic damage analysis of e-beam annealed silicon wafers', ESSDERC '81, September 1981, Toulouse.
-
6)
-
R.K. Surridge ,
B.J. Sealy ,
A.D.E. D'cruz ,
K.G. Stephens
.
(1977)
Annealing kinetic of donor ions implanted into GaAs, GaAs and related compounds (Edinburgh) 1976.
-
7)
-
J.F. Gibbons ,
L.D. Hess ,
T.W. Sigmond
.
(1981)
, Lasers and electron beam solid interactions and materials processing.
-
8)
-
R.T. Hodgson ,
J.E.E. Baglin ,
R. Pal ,
J.M. Neri ,
D.A. Hammer
.
Ion beam annealing of semiconductors.
Appl. Phys. Lett.
-
9)
-
Finetti, M., Litti, R., Merli, P.G., Zignani, F.: `Self annealing of ion implanted Si—first experimental results', ESSDERC '81, September 1981, Toulouse.
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