Threshold voltage of ion implanted GaAs MESFET
Threshold voltage of ion implanted GaAs MESFET
- Author(s): T. Mizutani ; S. Ishida ; T. Honda ; Y. Kawasaki
- DOI: 10.1049/el:19820037
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- Author(s): T. Mizutani 1 ; S. Ishida 1 ; T. Honda 1 ; Y. Kawasaki 1
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View affiliations
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Affiliations:
1: Musashino Electrical Communication Laboratory, NTT, Musashino, Japan
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Affiliations:
1: Musashino Electrical Communication Laboratory, NTT, Musashino, Japan
- Source:
Volume 18, Issue 2,
21 January 1982,
p.
53 – 54
DOI: 10.1049/el:19820037 , Print ISSN 0013-5194, Online ISSN 1350-911X
Threshold voltages for ion implanted GaAs MESFETs are measured and shown to have good coincidence with calculated results. The effect of implantation energy on threshold voltage is discussed. The optimum implantation energy is about 45 ∼ 60 keV.
Inspec keywords: field effect integrated circuits; III-V semiconductors; ion implantation; Schottky gate field effect transistors; integrated circuit technology; gallium arsenide
Other keywords:
Subjects: Other field effect devices; Semiconductor doping; Other field effect integrated circuits
References
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