Threshold voltage of ion implanted GaAs MESFET

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Threshold voltage of ion implanted GaAs MESFET

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© The Institution of Electrical Engineers
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Threshold voltages for ion implanted GaAs MESFETs are measured and shown to have good coincidence with calculated results. The effect of implantation energy on threshold voltage is discussed. The optimum implantation energy is about 45 ∼ 60 keV.

Inspec keywords: field effect integrated circuits; III-V semiconductors; ion implantation; Schottky gate field effect transistors; integrated circuit technology; gallium arsenide

Other keywords: ion implanted GaAs MESFET; implantation energy; IC fabrication; threshold voltage

Subjects: Other field effect devices; Semiconductor doping; Other field effect integrated circuits

References

    1. 1)
      • Y. Nanishi , H. Yamazaki , T. Mizutani , S. Miyazawa . (1981) Gallium arsenide and related compounds, Characterization of LEC-grown semi-insulating GaAs for integrated circuit applications.
    2. 2)
      • H.H. Hobgood , G.W. Eldridge , D.L. Barrett , R.N. Thomas . High-purity semi-insulating GaAs material for monolithic microwave integrated circuits. IEEE Trans. , 140 - 149
    3. 3)
      • A.M. Huber , G. Morillot , N.T. Linh , P.N. Favennec , B. Deveaud , B. Toulouse . Chromium profiles in semi-insulating GaAs after annealing with a Si3N4 encapsulant. Appl. Phys. Lett. , 858 - 859
    4. 4)
      • A. Lidow , J.F. Gibbons . Multilayered encapsulation of GaAs. J. Appl. Phys. , 5213 - 5217
    5. 5)
      • T. Mizutani , S. Ishida , M. Fujimoto . GaAs field effect transistor by selective sulphur-ion implantation. Electron. Lett. , 431 - 432
    6. 6)
      • G.W. Taylor , H.M. Darley , R.C. Frye , P.K. Chatterjee . A device model for an ion-implanted MESFET. IEEE Trans. , 172 - 182
    7. 7)
      • I.J. Gyula , J.W. Mayer , I.V. Mitchell , V. Rodriguez . Outdiffusion through silicon oxide and silicon nitride layers on gallium arsenide. Appl. Phys. Lett. , 332 - 334
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